features adoption of fbet, mbit processes. low collector-to-emitter saturation voltage. large current capacity and wide aso. fast switching speed. very small size making it easy to provide highdensity, small-sized hybrid ic? s. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6v collector current i c 2a collector current (pulse) i cp 5a p c 500 mw p c* 1.3 w junction temperature t j 150 storage temperature t stg -55to+150 * mounted on ceramic board(250mm2x0.8mm) collector dissipation sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors 2SD1621 product specification 4008-318-123
smd type transistors 2SD1621 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =20v,i e =0 0.1 a emitter cutoff current i ebo v eb =4v,i c =0 0.1 a dc current gain h fe v ce =2v,i c = 100 ma 100 560 gain bandwidth product f t v ce =10v,i c = 50 ma 150 mhz output capacitance c ob v cb = 10 v , f = 1.0mhz 19 pf collector-emitter saturation voltage v ce(sat) i c =1.5a,i b = 75 ma 0.18 0.4 v base-emitter saturation voltage v be(sat) i c =1.5a,i b = 75 ma 0.85 1.2 v collector-base breakdown voltage v (br)cbo i c = 10a , i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 25 v emitter-base breakdown voltage v (br)ebo i e = 10a , i c =0 6 v turn-on timie t on 60 ns storage time t stg 500 ns turn-off time t f 25 ns h fe classification marking rank r s t u hfe 100 200 140 280 200 400 280 560 dd sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
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